6H-SiC |
4H-SiC |
|
Crystal
stacking sequence |
ABCABC |
ABCB |
Lattice
parameter |
a=3.073A c=15.117A |
a=3.076A c=10.053A |
Band-gap |
3.02eV |
3.27eV |
Dielectric
constant |
9.66 |
9.6 |
Refraction
Index |
n0=2.707 ne=2.755 |
n0=2.719 ne=2.777 |